Hexagonal AlN films grown on nominal and off - axis Si ( 0 0 1 ) substrates
نویسندگان
چکیده
Nucleation and growth of wurtzite AlN layers on nominal and off-axis Si(0 0 1) substrates by plasma-assisted molecular beam epitaxy is reported. The nucleation and the growth dynamics have been studied in situ by reflection high-energy electron diffraction. For the films grown on the nominal Si(0 0 1) surface, cross-sectional transmission electron microscopy and X-ray diffraction investigations revealed a two-domain film structure (AlN and AlN) with an epitaxial orientation relationship of [0 0 0 1]AlN || [0 0 1]Si and h0 1 % 1 0iAlN 1 || h% 2 1 1 0iAlN || [1 1 0]Si. The epitaxial growth of single crystalline wurtzite AlN thin films has been achieved on off-axis Si(0 0 1) substrates with an epitaxial orientation relationship of [0 0 0 1]AlN parallel to the surface normal and h0 1 1 0iAlN || [1 1 0]Si.# 2001 Elsevier Science B.V. All rights reserved. PACS: 81.15.Hi; 61.14.Hg; 61.14.Qp
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